onsemi FDD86102 is a FDD86102 from onsemi, part of the MOSFETs. It is designed for 100V 24mΩ@10V,8A 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 8A;36A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@10V,8A
- Power Dissipation (Pd): 3.1W;62W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.035nF@50V
- Total Gate Charge (Qg@Vgs): 19nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.438 grams.
More on FDD86102
Full Specifications of FDD86102
| Model Number | FDD86102 |
| Model Name | onsemi FDD86102 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 24mΩ@10V,8A 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.438 grams / 0.01545 oz |
| Package / Case | TO-252(DPAK) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 8A;36A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 24mΩ@10V,8A |
| Power Dissipation (Pd) | 3.1W;62W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.035nF@50V |
| Total Gate Charge (Qg@Vgs) | 19nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |