onsemi FDD8782 is a FDD8782 from onsemi, part of the MOSFETs. It is designed for 25V 35A 50W 11mΩ@10V,35A 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 25V
- Continuous Drain Current (Id): 35A
- Power Dissipation (Pd): 50W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,35A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.22nF@13V
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.371 grams.
More on FDD8782
Full Specifications of FDD8782
| Model Number | FDD8782 |
| Model Name | onsemi FDD8782 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 25V 35A 50W 11mΩ@10V,35A 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.371 grams / 0.013087 oz |
| Package / Case | TO-252(DPAK) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 25V |
| Continuous Drain Current (Id) | 35A |
| Power Dissipation (Pd) | 50W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 11mΩ@10V,35A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.22nF@13V |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |