FDD8870 by onsemi – Specifications

onsemi FDD8870 is a FDD8870 from onsemi, part of the MOSFETs. It is designed for 30V 3.9mΩ@10V,35A 160W 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 21A;160A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@10V,35A
  • Power Dissipation (Pd): 160W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.16nF@15V
  • Total Gate Charge (Qg@Vgs): 118nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.438 grams.

Full Specifications of FDD8870

Model NumberFDD8870
Model Nameonsemi FDD8870
CategoryMOSFETs
Brandonsemi
Description30V 3.9mΩ@10V,35A 160W 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.438 grams / 0.01545 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)21A;160A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.9mΩ@10V,35A
Power Dissipation (Pd)160W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.16nF@15V
Total Gate Charge (Qg@Vgs)118nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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