FDD8896 by onsemi – Specifications

onsemi FDD8896 is a FDD8896 from onsemi, part of the MOSFETs. It is designed for 30V 80W 5.7mΩ@10V,35A 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 17A;94A
  • Power Dissipation (Pd): 80W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.7mΩ@10V,35A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.525nF@15V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.438 grams.

Full Specifications of FDD8896

Model NumberFDD8896
Model Nameonsemi FDD8896
CategoryMOSFETs
Brandonsemi
Description30V 80W 5.7mΩ@10V,35A 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.438 grams / 0.01545 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)17A;94A
Power Dissipation (Pd)80W
Drain Source On Resistance (RDS(on)@Vgs,Id)5.7mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.525nF@15V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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