onsemi FDI8441 is a FDI8441 from onsemi, part of the MOSFETs. It is designed for 40V 2.7mΩ@80A,10V 300W 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS. This product comes in a I2PAK(TO-262) package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 26A;80A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7mΩ@80A,10V
- Power Dissipation (Pd): 300W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 15pF@25V
- Total Gate Charge (Qg@Vgs): 280nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDI8441
Full Specifications of FDI8441
| Model Number | FDI8441 |
| Model Name | onsemi FDI8441 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 40V 2.7mΩ@80A,10V 300W 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | I2PAK(TO-262) |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) | 26A;80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.7mΩ@80A,10V |
| Power Dissipation (Pd) | 300W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 15pF@25V |
| Total Gate Charge (Qg@Vgs) | 280nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |