FDM3622 by onsemi – Specifications

onsemi FDM3622 is a FDM3622 from onsemi, part of the MOSFETs. It is designed for 100V 4.4A 60mΩ@4.4A,10V 2.1W 4V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 4.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@4.4A,10V
  • Power Dissipation (Pd): 2.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.09nF@25V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.19 grams.

Full Specifications of FDM3622

Model NumberFDM3622
Model Nameonsemi FDM3622
CategoryMOSFETs
Brandonsemi
Description100V 4.4A 60mΩ@4.4A,10V 2.1W 4V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.190 grams / 0.006702 oz
Package / CaseWDFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)4.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)60mΩ@4.4A,10V
Power Dissipation (Pd)2.1W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.09nF@25V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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