onsemi FDMA86108LZ is a FDMA86108LZ from onsemi, part of the MOSFETs. It is designed for 100V 2.2A 2.4W 243mΩ@2.2A,10V 3V@250uA 1PCSNChannel VDFN-6(2x2) MOSFETs ROHS. This product comes in a VDFN-6(2x2) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 2.2A
- Power Dissipation (Pd): 2.4W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 243mΩ@2.2A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 163pF@50V
- Total Gate Charge (Qg@Vgs): 3nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.022 grams.
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Full Specifications of FDMA86108LZ
Model Number | FDMA86108LZ |
Model Name | onsemi FDMA86108LZ |
Category | MOSFETs |
Brand | onsemi |
Description | 100V 2.2A 2.4W 243mΩ@2.2A,10V 3V@250uA 1PCSNChannel VDFN-6(2x2) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.022 grams / 0.000776 oz |
Package / Case | VDFN-6(2x2) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 2.2A |
Power Dissipation (Pd) | 2.4W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 243mΩ@2.2A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 163pF@50V |
Total Gate Charge (Qg@Vgs) | 3nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |