FDMB668P by onsemi – Specifications

onsemi FDMB668P is a FDMB668P from onsemi, part of the MOSFETs. It is designed for 20V 6.1A 35mΩ@6.1A,4.5V 1.9W 1V@250uA 1PCSPChannel MLP-8(3x1.9) MOSFETs ROHS. This product comes in a MLP-8(3x1.9) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 6.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@6.1A,4.5V
  • Power Dissipation (Pd): 1.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.085nF@10V
  • Total Gate Charge (Qg@Vgs): 59nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMB668P

Model NumberFDMB668P
Model Nameonsemi FDMB668P
CategoryMOSFETs
Brandonsemi
Description20V 6.1A 35mΩ@6.1A,4.5V 1.9W 1V@250uA 1PCSPChannel MLP-8(3x1.9) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseMLP-8(3x1.9)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)6.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)35mΩ@6.1A,4.5V
Power Dissipation (Pd)1.9W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.085nF@10V
Total Gate Charge (Qg@Vgs)59nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - FDMB668P With Other 200 Models

Related Models - FDMB668P Alternative

Scroll to Top