FDMC007N30D by onsemi – Specifications

onsemi FDMC007N30D is a FDMC007N30D from onsemi, part of the MOSFETs. It is designed for 30V 46A 11.6mΩ@10A,10V 3V@250uA 2 N-Channel WDFN-8 MOSFETs ROHS. This product comes in a WDFN-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 46A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.6mΩ@10A,10V
  • Power Dissipation (Pd): 1.9W;2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.11nF@15V;2.36nF@15V
  • Total Gate Charge (Qg@Vgs): 34nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.139 grams.

Full Specifications of FDMC007N30D

Model NumberFDMC007N30D
Model Nameonsemi FDMC007N30D
CategoryMOSFETs
Brandonsemi
Description30V 46A 11.6mΩ@10A,10V 3V@250uA 2 N-Channel WDFN-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.139 grams / 0.004903 oz
Package / CaseWDFN-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)46A
Drain Source On Resistance (RDS(on)@Vgs,Id)11.6mΩ@10A,10V
Power Dissipation (Pd)1.9W;2.5W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.11nF@15V;2.36nF@15V
Total Gate Charge (Qg@Vgs)34nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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