FDMC012N03 by onsemi – Specifications

onsemi FDMC012N03 is a FDMC012N03 from onsemi, part of the MOSFETs. It is designed for 30V 1.23mΩ@35A,10V 2V@250uA 1PCSNChannel Power-33-8 MOSFETs ROHS. This product comes in a Power-33-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 35A;185A
  • Power Dissipation (Pd): 2.3W;64W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.23mΩ@35A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.183nF@15V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

Full Specifications of FDMC012N03

Model NumberFDMC012N03
Model Nameonsemi FDMC012N03
CategoryMOSFETs
Brandonsemi
Description30V 1.23mΩ@35A,10V 2V@250uA 1PCSNChannel Power-33-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CasePower-33-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)35A;185A
Power Dissipation (Pd)2.3W;64W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.23mΩ@35A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.183nF@15V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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