FDMC4435BZ by onsemi – Specifications

onsemi FDMC4435BZ is a FDMC4435BZ from onsemi, part of the MOSFETs. It is designed for 30V 20mΩ@8.5A,10V 3V@250uA 1PCSPChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8.5A;18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@8.5A,10V
  • Power Dissipation (Pd): 2.3W;31W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.045nF@15V
  • Total Gate Charge (Qg@Vgs): 46nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.14 grams.

Full Specifications of FDMC4435BZ

Model NumberFDMC4435BZ
Model Nameonsemi FDMC4435BZ
CategoryMOSFETs
Brandonsemi
Description30V 20mΩ@8.5A,10V 3V@250uA 1PCSPChannel WDFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.140 grams / 0.004938 oz
Package / CaseWDFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)8.5A;18A
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@8.5A,10V
Power Dissipation (Pd)2.3W;31W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.045nF@15V
Total Gate Charge (Qg@Vgs)46nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - FDMC4435BZ With Other 200 Models

Related Models - FDMC4435BZ Alternative

Scroll to Top