onsemi FDMC7672S is a FDMC7672S from onsemi, part of the MOSFETs. It is designed for 30V 6mΩ@14.8A,10V 3V@1mA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 14.8A;18A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6mΩ@14.8A,10V
- Power Dissipation (Pd): 2.3W;36W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.52nF@15V
- Total Gate Charge (Qg@Vgs): 42nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.139 grams.
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Full Specifications of FDMC7672S
Model Number | FDMC7672S |
Model Name | onsemi FDMC7672S |
Category | MOSFETs |
Brand | onsemi |
Description | 30V 6mΩ@14.8A,10V 3V@1mA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.139 grams / 0.004903 oz |
Package / Case | WDFN-8(3.3x3.3) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 14.8A;18A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6mΩ@14.8A,10V |
Power Dissipation (Pd) | 2.3W;36W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.52nF@15V |
Total Gate Charge (Qg@Vgs) | 42nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |