FDMS86350ET80 by onsemi – Specifications

onsemi FDMS86350ET80 is a FDMS86350ET80 from onsemi, part of the MOSFETs. It is designed for 80V 198A 2mΩ@10V,25A 187W 3.8V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 198A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@10V,25A
  • Power Dissipation (Pd): 187W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 31pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.03nF@40V
  • Total Gate Charge (Qg@Vgs): 90nC@0~8V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.166 grams.

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Full Specifications of FDMS86350ET80

Model NumberFDMS86350ET80
Model Nameonsemi FDMS86350ET80
CategoryMOSFETs
Brandonsemi
Description80V 198A 2mΩ@10V,25A 187W 3.8V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.166 grams / 0.005855 oz
Package / CasePower-56-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)198A
Drain Source On Resistance (RDS(on)@Vgs,Id)2mΩ@10V,25A
Power Dissipation (Pd)187W
Gate Threshold Voltage (Vgs(th)@Id)3.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)31pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.03nF@40V
Total Gate Charge (Qg@Vgs)90nC@0~8V
Operating Temperature-55℃~+175℃@(Tj)

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