FDMC8360LET40 by onsemi – Specifications

onsemi FDMC8360LET40 is a FDMC8360LET40 from onsemi, part of the MOSFETs. It is designed for 40V 2.1mΩ@27A,10V 3V@250uA 1PCSNChannel Power-33-8 MOSFETs ROHS. This product comes in a Power-33-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 27A;141A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1mΩ@27A,10V
  • Power Dissipation (Pd): 2.8W;75W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.3nF@20V
  • Total Gate Charge (Qg@Vgs): 80nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.139 grams.

Full Specifications of FDMC8360LET40

Model NumberFDMC8360LET40
Model Nameonsemi FDMC8360LET40
CategoryMOSFETs
Brandonsemi
Description40V 2.1mΩ@27A,10V 3V@250uA 1PCSNChannel Power-33-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.139 grams / 0.004903 oz
Package / CasePower-33-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)27A;141A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.1mΩ@27A,10V
Power Dissipation (Pd)2.8W;75W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.3nF@20V
Total Gate Charge (Qg@Vgs)80nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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