FDMC86160 by onsemi – Specifications

onsemi FDMC86160 is a FDMC86160 from onsemi, part of the MOSFETs. It is designed for 100V 14mΩ@9A,10V 4V@250uA 1PCSNChannel Power-33 MOSFETs ROHS. This product comes in a Power-33 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 9A;43A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@9A,10V
  • Power Dissipation (Pd): 2.3W;54W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.29nF@50V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.071 grams.

Full Specifications of FDMC86160

Model NumberFDMC86160
Model Nameonsemi FDMC86160
CategoryMOSFETs
Brandonsemi
Description100V 14mΩ@9A,10V 4V@250uA 1PCSNChannel Power-33 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.071 grams / 0.002504 oz
Package / CasePower-33
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)9A;43A
Drain Source On Resistance (RDS(on)@Vgs,Id)14mΩ@9A,10V
Power Dissipation (Pd)2.3W;54W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.29nF@50V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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