onsemi FDMC86259P is a FDMC86259P from onsemi, part of the MOSFETs. It is designed for 150V 107mΩ@3A,10V 4V@250uA 1PCSPChannel Power-33-8 MOSFETs ROHS. This product comes in a Power-33-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 3.2A;13A
- Power Dissipation (Pd): 2.3W;62W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 107mΩ@3A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 2.045nF@75V
- Total Gate Charge (Qg@Vgs): 32nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.
More on FDMC86259P
Full Specifications of FDMC86259P
| Model Number | FDMC86259P |
| Model Name | onsemi FDMC86259P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 150V 107mΩ@3A,10V 4V@250uA 1PCSPChannel Power-33-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.110 grams / 0.00388 oz |
| Package / Case | Power-33-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 150V |
| Continuous Drain Current (Id) | 3.2A;13A |
| Power Dissipation (Pd) | 2.3W;62W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 107mΩ@3A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 2.045nF@75V |
| Total Gate Charge (Qg@Vgs) | 32nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |