FDMD8240L by onsemi – Specifications

onsemi FDMD8240L is a FDMD8240L from onsemi, part of the MOSFETs. It is designed for 40V 23A 2.1W 2.6mΩ@23A,10V 3V@250uA 2 N-Channel PQFN-12 MOSFETs ROHS. This product comes in a PQFN-12 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 23A
  • Power Dissipation (Pd): 2.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.6mΩ@23A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 4.23nF@20V
  • Total Gate Charge (Qg@Vgs): 56nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMD8240L

Model NumberFDMD8240L
Model Nameonsemi FDMD8240L
CategoryMOSFETs
Brandonsemi
Description40V 23A 2.1W 2.6mΩ@23A,10V 3V@250uA 2 N-Channel PQFN-12 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-12
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)23A
Power Dissipation (Pd)2.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.6mΩ@23A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)4.23nF@20V
Total Gate Charge (Qg@Vgs)56nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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