FDME430NT by onsemi – Specifications

onsemi FDME430NT is a FDME430NT from onsemi, part of the MOSFETs. It is designed for 30V 6A 40mΩ@6A,4.5V 700mW 1.5V@250uA 1PCSNChannel MicroFET(1.6x1.6) MOSFETs ROHS. This product comes in a MicroFET(1.6x1.6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@6A,4.5V
  • Power Dissipation (Pd): 700mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 760pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDME430NT

Model NumberFDME430NT
Model Nameonsemi FDME430NT
CategoryMOSFETs
Brandonsemi
Description30V 6A 40mΩ@6A,4.5V 700mW 1.5V@250uA 1PCSNChannel MicroFET(1.6x1.6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseMicroFET(1.6x1.6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)40mΩ@6A,4.5V
Power Dissipation (Pd)700mW
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)760pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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