FDMS10C4D2N by onsemi – Specifications

onsemi FDMS10C4D2N is a FDMS10C4D2N from onsemi, part of the MOSFETs. It is designed for 100V 17A 4.2mΩ@44A,10V 125W 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 17A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@44A,10V
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.5nF@50V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMS10C4D2N

Model NumberFDMS10C4D2N
Model Nameonsemi FDMS10C4D2N
CategoryMOSFETs
Brandonsemi
Description100V 17A 4.2mΩ@44A,10V 125W 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)17A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.2mΩ@44A,10V
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.5nF@50V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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