onsemi FDMS10C4D2N is a FDMS10C4D2N from onsemi, part of the MOSFETs. It is designed for 100V 17A 4.2mΩ@44A,10V 125W 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 17A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@44A,10V
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.5nF@50V
- Total Gate Charge (Qg@Vgs): 65nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDMS10C4D2N
Full Specifications of FDMS10C4D2N
Model Number | FDMS10C4D2N |
Model Name | onsemi FDMS10C4D2N |
Category | MOSFETs |
Brand | onsemi |
Description | 100V 17A 4.2mΩ@44A,10V 125W 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PQFN-8(5x6) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 17A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.2mΩ@44A,10V |
Power Dissipation (Pd) | 125W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 4.5nF@50V |
Total Gate Charge (Qg@Vgs) | 65nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |