FDD6670AS by onsemi – Specifications

onsemi FDD6670AS is a FDD6670AS from onsemi, part of the MOSFETs. It is designed for 30V 76A 70W 8mΩ@13.8A,10V 3V@1mA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 76A
  • Power Dissipation (Pd): 70W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@13.8A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.58nF@15V
  • Total Gate Charge (Qg@Vgs): 40nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of FDD6670AS

Model NumberFDD6670AS
Model Nameonsemi FDD6670AS
CategoryMOSFETs
Brandonsemi
Description30V 76A 70W 8mΩ@13.8A,10V 3V@1mA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)76A
Power Dissipation (Pd)70W
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@13.8A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.58nF@15V
Total Gate Charge (Qg@Vgs)40nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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