FDMS3606S by onsemi – Specifications

onsemi FDMS3606S is a FDMS3606S from onsemi, part of the MOSFETs. It is designed for 30V 8mΩ@13A,10V 1W 2.7V@250uA 2 N-Channel Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 13A;27A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@13A,10V
  • Power Dissipation (Pd): 1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.7V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.785nF@15V
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMS3606S

Model NumberFDMS3606S
Model Nameonsemi FDMS3606S
CategoryMOSFETs
Brandonsemi
Description30V 8mΩ@13A,10V 1W 2.7V@250uA 2 N-Channel Power-56-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePower-56-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)13A;27A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@13A,10V
Power Dissipation (Pd)1W
Gate Threshold Voltage (Vgs(th)@Id)2.7V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.785nF@15V
Total Gate Charge (Qg@Vgs)29nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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