onsemi FDMS3660AS is a FDMS3660AS from onsemi, part of the MOSFETs. It is designed for 30V 8mΩ@13A,10V 1W 2.7V@250uA Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 13A;30A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@13A,10V
- Power Dissipation (Pd): 1W
- Gate Threshold Voltage (Vgs(th)@Id): 2.7V@250uA
- Input Capacitance (Ciss@Vds): 2.23nF@15V
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDMS3660AS
Full Specifications of FDMS3660AS
| Model Number | FDMS3660AS |
| Model Name | onsemi FDMS3660AS |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 8mΩ@13A,10V 1W 2.7V@250uA Power-56-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | Power-56-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 13A;30A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8mΩ@13A,10V |
| Power Dissipation (Pd) | 1W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.7V@250uA |
| Input Capacitance (Ciss@Vds) | 2.23nF@15V |
| Total Gate Charge (Qg@Vgs) | 30nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |