FDMS8560S by onsemi – Specifications

onsemi FDMS8560S is a FDMS8560S from onsemi, part of the MOSFETs. It is designed for 25V 1.8mΩ@30A,10V 2.2V@1mA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 30A;70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8mΩ@30A,10V
  • Power Dissipation (Pd): 2.5W;65W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.35nF@13V
  • Total Gate Charge (Qg@Vgs): 68nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMS8560S

Model NumberFDMS8560S
Model Nameonsemi FDMS8560S
CategoryMOSFETs
Brandonsemi
Description25V 1.8mΩ@30A,10V 2.2V@1mA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)30A;70A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.8mΩ@30A,10V
Power Dissipation (Pd)2.5W;65W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.35nF@13V
Total Gate Charge (Qg@Vgs)68nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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