FDMS8570SDC by onsemi – Specifications

onsemi FDMS8570SDC is a FDMS8570SDC from onsemi, part of the MOSFETs. It is designed for 25V 2.8mΩ@28A,10V 2.2V@1mA 1PCSNChannel PowerTDFN-8 MOSFETs ROHS. This product comes in a PowerTDFN-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 28A;60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8mΩ@28A,10V
  • Power Dissipation (Pd): 3.3W;59W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.825nF@13V
  • Total Gate Charge (Qg@Vgs): 42nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMS8570SDC

Model NumberFDMS8570SDC
Model Nameonsemi FDMS8570SDC
CategoryMOSFETs
Brandonsemi
Description25V 2.8mΩ@28A,10V 2.2V@1mA 1PCSNChannel PowerTDFN-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerTDFN-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)28A;60A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.8mΩ@28A,10V
Power Dissipation (Pd)3.3W;59W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.825nF@13V
Total Gate Charge (Qg@Vgs)42nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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