FDMS86180 by onsemi – Specifications

onsemi FDMS86180 is a FDMS86180 from onsemi, part of the MOSFETs. It is designed for 100V 151A 3.2mΩ@67A,10V 138W 4V@370uA 1PCSNChannel Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 151A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@67A,10V
  • Power Dissipation (Pd): 138W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@370uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.215nF@50V
  • Total Gate Charge (Qg@Vgs): 54nC@6V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.288 grams.

Full Specifications of FDMS86180

Model NumberFDMS86180
Model Nameonsemi FDMS86180
CategoryMOSFETs
Brandonsemi
Description100V 151A 3.2mΩ@67A,10V 138W 4V@370uA 1PCSNChannel Power-56-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.288 grams / 0.010159 oz
Package / CasePower-56-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)151A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.2mΩ@67A,10V
Power Dissipation (Pd)138W
Gate Threshold Voltage (Vgs(th)@Id)4V@370uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.215nF@50V
Total Gate Charge (Qg@Vgs)54nC@6V
Operating Temperature-55℃~+150℃@(Tj)

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