FDMS86181E by onsemi – Specifications

onsemi FDMS86181E is a FDMS86181E from onsemi, part of the MOSFETs. It is designed for 100V 124A 3.3mΩ@10V,44A 125W 3.1V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 124A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.3mΩ@10V,44A
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.1V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 20pF@50V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.945nF@50V
  • Total Gate Charge (Qg@Vgs): 27nC@6V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMS86181E

Model NumberFDMS86181E
Model Nameonsemi FDMS86181E
CategoryMOSFETs
Brandonsemi
Description100V 124A 3.3mΩ@10V,44A 125W 3.1V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePower-56-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)124A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.3mΩ@10V,44A
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)3.1V@250uA
Reverse Transfer Capacitance (Crss@Vds)20pF@50V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.945nF@50V
Total Gate Charge (Qg@Vgs)27nC@6V
Operating Temperature-55℃~+150℃@(Tj)

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