onsemi FDP053N08B-F102 is a FDP053N08B-F102 from onsemi, part of the MOSFETs. It is designed for 80V 75A 146W 5.3mΩ@75A,10V 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 75A
- Power Dissipation (Pd): 146W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.3mΩ@75A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.96nF@40V
- Total Gate Charge (Qg@Vgs): 85nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.
More on FDP053N08B-F102
Full Specifications of FDP053N08B-F102
Model Number | FDP053N08B-F102 |
Model Name | onsemi FDP053N08B-F102 |
Category | MOSFETs |
Brand | onsemi |
Description | 80V 75A 146W 5.3mΩ@75A,10V 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.680 grams / 0.094534 oz |
Package / Case | TO-220 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 80V |
Continuous Drain Current (Id) | 75A |
Power Dissipation (Pd) | 146W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.3mΩ@75A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.96nF@40V |
Total Gate Charge (Qg@Vgs) | 85nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |