FDP16N50 by onsemi – Specifications

onsemi FDP16N50 is a FDP16N50 from onsemi, part of the MOSFETs. It is designed for 500V 16A 380mΩ@8A,10V 200W 5V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@8A,10V
  • Power Dissipation (Pd): 200W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.945nF@25V
  • Total Gate Charge (Qg@Vgs): 45nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

Full Specifications of FDP16N50

Model NumberFDP16N50
Model Nameonsemi FDP16N50
CategoryMOSFETs
Brandonsemi
Description500V 16A 380mΩ@8A,10V 200W 5V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)380mΩ@8A,10V
Power Dissipation (Pd)200W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.945nF@25V
Total Gate Charge (Qg@Vgs)45nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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