onsemi FDP55N06 is a FDP55N06 from onsemi, part of the MOSFETs. It is designed for 60V 55A 22mΩ@10V,27.5A 114W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 55A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,27.5A
- Power Dissipation (Pd): 114W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.51nF@25V
- Total Gate Charge (Qg@Vgs): 37nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.16 grams.
More on FDP55N06
Full Specifications of FDP55N06
| Model Number | FDP55N06 |
| Model Name | onsemi FDP55N06 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 55A 22mΩ@10V,27.5A 114W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.160 grams / 0.076192 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 55A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 22mΩ@10V,27.5A |
| Power Dissipation (Pd) | 114W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.51nF@25V |
| Total Gate Charge (Qg@Vgs) | 37nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |