onsemi FDP65N06 is a FDP65N06 from onsemi, part of the MOSFETs. It is designed for 60V 65A 16mΩ@10V,32.5A 135W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 65A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@10V,32.5A
- Power Dissipation (Pd): 135W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.17nF@25V
- Total Gate Charge (Qg@Vgs): 43nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.
More on FDP65N06
Full Specifications of FDP65N06
| Model Number | FDP65N06 |
| Model Name | onsemi FDP65N06 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 65A 16mΩ@10V,32.5A 135W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.680 grams / 0.094534 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 65A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 16mΩ@10V,32.5A |
| Power Dissipation (Pd) | 135W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.17nF@25V |
| Total Gate Charge (Qg@Vgs) | 43nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |