FDP6676S by onsemi – Specifications

onsemi FDP6676S is a FDP6676S from onsemi, part of the MOSFETs. It is designed for 30V 76A 70W 6.5mΩ@38A,10V 3V@1mA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 76A
  • Power Dissipation (Pd): 70W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ@38A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.853nF@15V
  • Total Gate Charge (Qg@Vgs): 56nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

Full Specifications of FDP6676S

Model NumberFDP6676S
Model Nameonsemi FDP6676S
CategoryMOSFETs
Brandonsemi
Description30V 76A 70W 6.5mΩ@38A,10V 3V@1mA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)76A
Power Dissipation (Pd)70W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.5mΩ@38A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.853nF@15V
Total Gate Charge (Qg@Vgs)56nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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