FDP8441 by onsemi – Specifications

onsemi FDP8441 is a FDP8441 from onsemi, part of the MOSFETs. It is designed for 40V 300W 4.7mΩ@10V,80A 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 23A;80A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7mΩ@10V,80A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 15nF@25V
  • Total Gate Charge (Qg@Vgs): 280nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.

Full Specifications of FDP8441

Model NumberFDP8441
Model Nameonsemi FDP8441
CategoryMOSFETs
Brandonsemi
Description40V 300W 4.7mΩ@10V,80A 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.000 grams / 0.105822 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)23A;80A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.7mΩ@10V,80A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)15nF@25V
Total Gate Charge (Qg@Vgs)280nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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