FDPC8014AS by onsemi – Specifications

onsemi FDPC8014AS is a FDPC8014AS from onsemi, part of the MOSFETs. It is designed for 25V 159A 37W 2 N-Channel PQFN-8-EP(5x6) MOSFETs ROHS. This product comes in a PQFN-8-EP(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 159A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,20A;0.75mΩ@10V,40A
  • Power Dissipation (Pd): 37W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA;3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 54pF@13V;172pF@13V
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.695nF@13V;6.985nF@13V
  • Total Gate Charge (Qg@Vgs): [email protected];[email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDPC8014AS

Model NumberFDPC8014AS
Model Nameonsemi FDPC8014AS
CategoryMOSFETs
Brandonsemi
Description25V 159A 37W 2 N-Channel PQFN-8-EP(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-8-EP(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)159A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@10V,20A;0.75mΩ@10V,40A
Power Dissipation (Pd)37W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA;3V@250uA
Reverse Transfer Capacitance (Crss@Vds)54pF@13V;172pF@13V
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.695nF@13V;6.985nF@13V
Total Gate Charge (Qg@Vgs)[email protected];[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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