onsemi FDS2670 is a FDS2670 from onsemi, part of the MOSFETs. It is designed for 200V 3A 130mΩ@3A,10V 2.5W 4.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 3A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@3A,10V
- Power Dissipation (Pd): 2.5W
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.228nF@100V
- Total Gate Charge (Qg@Vgs): 43nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.125 grams.
More on FDS2670
Full Specifications of FDS2670
| Model Number | FDS2670 |
| Model Name | onsemi FDS2670 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 200V 3A 130mΩ@3A,10V 2.5W 4.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.125 grams / 0.004409 oz |
| Package / Case | SO-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 3A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 130mΩ@3A,10V |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.228nF@100V |
| Total Gate Charge (Qg@Vgs) | 43nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |