onsemi FDS3890 is a FDS3890 from onsemi, part of the MOSFETs. It is designed for 80V 4.7A 44mΩ@4.7A,10V 900mW 4V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 4.7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 44mΩ@4.7A,10V
- Power Dissipation (Pd): 900mW
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 1.18nF@40V
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.22 grams.
More on FDS3890
Full Specifications of FDS3890
| Model Number | FDS3890 |
| Model Name | onsemi FDS3890 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 80V 4.7A 44mΩ@4.7A,10V 900mW 4V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.220 grams / 0.00776 oz |
| Package / Case | SO-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 80V |
| Continuous Drain Current (Id) | 4.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 44mΩ@4.7A,10V |
| Power Dissipation (Pd) | 900mW |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | 1.18nF@40V |
| Total Gate Charge (Qg@Vgs) | 35nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |