FDS6875 by onsemi – Specifications

onsemi FDS6875 is a FDS6875 from onsemi, part of the MOSFETs. It is designed for 20V 6A 30mΩ@6A,4.5V 900mW 1.5V@250uA 2 P-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@6A,4.5V
  • Power Dissipation (Pd): 900mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 2.25nF@10V
  • Total Gate Charge (Qg@Vgs): 31nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.166 grams.

Full Specifications of FDS6875

Model NumberFDS6875
Model Nameonsemi FDS6875
CategoryMOSFETs
Brandonsemi
Description20V 6A 30mΩ@6A,4.5V 900mW 1.5V@250uA 2 P-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.166 grams / 0.005855 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)30mΩ@6A,4.5V
Power Dissipation (Pd)900mW
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 P-Channel
Input Capacitance (Ciss@Vds)2.25nF@10V
Total Gate Charge (Qg@Vgs)31nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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