onsemi FDS6898A is a FDS6898A from onsemi, part of the MOSFETs. It is designed for 20V 9.4A 900mW 14mΩ@9.4A,4.5V 1.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 9.4A
- Power Dissipation (Pd): 900mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@9.4A,4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 1.821nF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.13 grams.
More on FDS6898A
Full Specifications of FDS6898A
| Model Number | FDS6898A |
| Model Name | onsemi FDS6898A |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 9.4A 900mW 14mΩ@9.4A,4.5V 1.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.130 grams / 0.004586 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 9.4A |
| Power Dissipation (Pd) | 900mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 14mΩ@9.4A,4.5V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | 1.821nF@10V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |