onsemi FDS6900S is a FDS6900S from onsemi, part of the MOSFETs. It is designed for 30V 900mW 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 6.9A;8.2A
- Power Dissipation (Pd): 900mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@10V,6.9A;22mΩ@10V,8.2A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA;3V@1mA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 771pF@15V;1.238nF@15V
- Total Gate Charge (Qg@Vgs): 11nC@5V;17nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.
More on FDS6900S
Full Specifications of FDS6900S
| Model Number | FDS6900S |
| Model Name | onsemi FDS6900S |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 900mW 2 N-Channel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.215 grams / 0.007584 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 6.9A;8.2A |
| Power Dissipation (Pd) | 900mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 30mΩ@10V,6.9A;22mΩ@10V,8.2A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA;3V@1mA |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | 771pF@15V;1.238nF@15V |
| Total Gate Charge (Qg@Vgs) | 11nC@5V;17nC@5V |
| Operating Temperature | -55℃~+150℃@(Tj) |