FDS6910 by onsemi – Specifications

onsemi FDS6910 is a FDS6910 from onsemi, part of the MOSFETs. It is designed for 30V 7.5A 13mΩ@7.5A,10V 900mW 3V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 7.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@7.5A,10V
  • Power Dissipation (Pd): 900mW
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.13nF@15V
  • Total Gate Charge (Qg@Vgs): 24nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.58 grams.

Full Specifications of FDS6910

Model NumberFDS6910
Model Nameonsemi FDS6910
CategoryMOSFETs
Brandonsemi
Description30V 7.5A 13mΩ@7.5A,10V 900mW 3V@250uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.580 grams / 0.020459 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)7.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)13mΩ@7.5A,10V
Power Dissipation (Pd)900mW
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.13nF@15V
Total Gate Charge (Qg@Vgs)24nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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