FDS7779Z by onsemi – Specifications

onsemi FDS7779Z is a FDS7779Z from onsemi, part of the MOSFETs. It is designed for 30V 16A 7.2mΩ@16A,10V 2.5W 3V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2mΩ@16A,10V
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 3.8nF@15V
  • Total Gate Charge (Qg@Vgs): 98nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

Full Specifications of FDS7779Z

Model NumberFDS7779Z
Model Nameonsemi FDS7779Z
CategoryMOSFETs
Brandonsemi
Description30V 16A 7.2mΩ@16A,10V 2.5W 3V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.2mΩ@16A,10V
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)3.8nF@15V
Total Gate Charge (Qg@Vgs)98nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - FDS7779Z With Other 200 Models

Related Models - FDS7779Z Alternative

Scroll to Top