FDS86106 by onsemi – Specifications

onsemi FDS86106 is a FDS86106 from onsemi, part of the MOSFETs. It is designed for 100V 3.4A 105mΩ@3.4A,10V 5W 4V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 105mΩ@3.4A,10V
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 208pF@50V
  • Total Gate Charge (Qg@Vgs): 4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.144 grams.

Full Specifications of FDS86106

Model NumberFDS86106
Model Nameonsemi FDS86106
CategoryMOSFETs
Brandonsemi
Description100V 3.4A 105mΩ@3.4A,10V 5W 4V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.144 grams / 0.005079 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)3.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)105mΩ@3.4A,10V
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)208pF@50V
Total Gate Charge (Qg@Vgs)4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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