FDS86240 by onsemi – Specifications

onsemi FDS86240 is a FDS86240 from onsemi, part of the MOSFETs. It is designed for 150V 7.5A 19.8mΩ@7.5A,10V 4V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 7.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 19.8mΩ@7.5A,10V
  • Power Dissipation (Pd): 2.5W;5W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.57nF@75V
  • Total Gate Charge (Qg@Vgs): 40nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.

Full Specifications of FDS86240

Model NumberFDS86240
Model Nameonsemi FDS86240
CategoryMOSFETs
Brandonsemi
Description150V 7.5A 19.8mΩ@7.5A,10V 4V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.120 grams / 0.004233 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)7.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)19.8mΩ@7.5A,10V
Power Dissipation (Pd)2.5W;5W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.57nF@75V
Total Gate Charge (Qg@Vgs)40nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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