FDS86242 by onsemi – Specifications

onsemi FDS86242 is a FDS86242 from onsemi, part of the MOSFETs. It is designed for 150V 4.1A 67mΩ@10V,4.1A 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 4.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 67mΩ@10V,4.1A
  • Power Dissipation (Pd): 2.5W;5W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 760pF@75V
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.207 grams.

Full Specifications of FDS86242

Model NumberFDS86242
Model Nameonsemi FDS86242
CategoryMOSFETs
Brandonsemi
Description150V 4.1A 67mΩ@10V,4.1A 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.207 grams / 0.007302 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)4.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)67mΩ@10V,4.1A
Power Dissipation (Pd)2.5W;5W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)760pF@75V
Total Gate Charge (Qg@Vgs)13nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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