onsemi FDS86242 is a FDS86242 from onsemi, part of the MOSFETs. It is designed for 150V 4.1A 67mΩ@10V,4.1A 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 4.1A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 67mΩ@10V,4.1A
- Power Dissipation (Pd): 2.5W;5W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 760pF@75V
- Total Gate Charge (Qg@Vgs): 13nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.207 grams.
More on FDS86242
Full Specifications of FDS86242
Model Number | FDS86242 |
Model Name | onsemi FDS86242 |
Category | MOSFETs |
Brand | onsemi |
Description | 150V 4.1A 67mΩ@10V,4.1A 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.207 grams / 0.007302 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 150V |
Continuous Drain Current (Id) | 4.1A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 67mΩ@10V,4.1A |
Power Dissipation (Pd) | 2.5W;5W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 760pF@75V |
Total Gate Charge (Qg@Vgs) | 13nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |