onsemi FDS86267P is a FDS86267P from onsemi, part of the MOSFETs. It is designed for 150V 2.2A 255mΩ@2.2A,10V 1W 4V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 2.2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 255mΩ@2.2A,10V
- Power Dissipation (Pd): 1W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 1.13nF@75V
- Total Gate Charge (Qg@Vgs): 16nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.
More on FDS86267P
Full Specifications of FDS86267P
| Model Number | FDS86267P |
| Model Name | onsemi FDS86267P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 150V 2.2A 255mΩ@2.2A,10V 1W 4V@250uA 1PCSPChannel SO-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.250 grams / 0.008819 oz |
| Package / Case | SO-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 150V |
| Continuous Drain Current (Id) | 2.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 255mΩ@2.2A,10V |
| Power Dissipation (Pd) | 1W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 1.13nF@75V |
| Total Gate Charge (Qg@Vgs) | 16nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |