FDS8935 by onsemi – Specifications

onsemi FDS8935 is a FDS8935 from onsemi, part of the MOSFETs. It is designed for 80V 2.1A 3.1W 183mΩ@10V,2.1A 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 2.1A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 183mΩ@10V,2.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 879pF@40V
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.

Full Specifications of FDS8935

Model NumberFDS8935
Model Nameonsemi FDS8935
CategoryMOSFETs
Brandonsemi
Description80V 2.1A 3.1W 183mΩ@10V,2.1A 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.120 grams / 0.004233 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)2.1A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)183mΩ@10V,2.1A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)879pF@40V
Total Gate Charge (Qg@Vgs)19nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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