onsemi FDS8949 is a FDS8949 from onsemi, part of the MOSFETs. It is designed for 40V 6A 2W 29mΩ@10V,6A 3V@250uA 2 N-Channel SO-8-150mil MOSFETs ROHS. This product comes in a SO-8-150mil package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 6A
- Power Dissipation (Pd): 2W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@10V,6A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 955pF@20V
- Total Gate Charge (Qg@Vgs): 11nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.266 grams.
More on FDS8949
Full Specifications of FDS8949
| Model Number | FDS8949 |
| Model Name | onsemi FDS8949 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 40V 6A 2W 29mΩ@10V,6A 3V@250uA 2 N-Channel SO-8-150mil MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.266 grams / 0.009383 oz |
| Package / Case | SO-8-150mil |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) | 6A |
| Power Dissipation (Pd) | 2W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 29mΩ@10V,6A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | 955pF@20V |
| Total Gate Charge (Qg@Vgs) | 11nC@5V |
| Operating Temperature | -55℃~+150℃@(Tj) |