FDS9933BZ by onsemi – Specifications

onsemi FDS9933BZ is a FDS9933BZ from onsemi, part of the MOSFETs. It is designed for 20V 4.9A 900mW 46mΩ@4.9A,4.5V 1.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4.9A
  • Power Dissipation (Pd): 900mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@4.9A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 985pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

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Full Specifications of FDS9933BZ

Model NumberFDS9933BZ
Model Nameonsemi FDS9933BZ
CategoryMOSFETs
Brandonsemi
Description20V 4.9A 900mW 46mΩ@4.9A,4.5V 1.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)4.9A
Power Dissipation (Pd)900mW
Drain Source On Resistance (RDS(on)@Vgs,Id)46mΩ@4.9A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)985pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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