FDT461N by onsemi – Specifications

onsemi FDT461N is a FDT461N from onsemi, part of the MOSFETs. It is designed for 100V 540mA 2Ω@540mA,10V 1.13W 2V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 540mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@540mA,10V
  • Power Dissipation (Pd): 1.13W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 74pF@25V
  • Total Gate Charge (Qg@Vgs): 4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.323 grams.

Full Specifications of FDT461N

Model NumberFDT461N
Model Nameonsemi FDT461N
CategoryMOSFETs
Brandonsemi
Description100V 540mA 2Ω@540mA,10V 1.13W 2V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.323 grams / 0.011394 oz
Package / CaseSOT-223-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)540mA
Drain Source On Resistance (RDS(on)@Vgs,Id)2Ω@540mA,10V
Power Dissipation (Pd)1.13W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)74pF@25V
Total Gate Charge (Qg@Vgs)4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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