onsemi FDW258P is a FDW258P from onsemi, part of the MOSFETs. It is designed for 12V 9A 1.3W 11mΩ@9A,4.5V 1.5V@250uA 1PCSPChannel TSSOP-8 MOSFETs ROHS. This product comes in a TSSOP-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 12V
- Continuous Drain Current (Id): 9A
- Power Dissipation (Pd): 1.3W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@9A,4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 5.049nF@5V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDW258P
Full Specifications of FDW258P
| Model Number | FDW258P |
| Model Name | onsemi FDW258P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 12V 9A 1.3W 11mΩ@9A,4.5V 1.5V@250uA 1PCSPChannel TSSOP-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TSSOP-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 12V |
| Continuous Drain Current (Id) | 9A |
| Power Dissipation (Pd) | 1.3W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 11mΩ@9A,4.5V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 5.049nF@5V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |