onsemi FDZ663P is a FDZ663P from onsemi, part of the MOSFETs. It is designed for 20V 2.7A 134mΩ@2A,4.5V 1.3W 1.2V@250uA 1PCSPChannel WLCSP-4(0.8x0.8) MOSFETs ROHS. This product comes in a WLCSP-4(0.8x0.8) package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 2.7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 134mΩ@2A,4.5V
- Power Dissipation (Pd): 1.3W
- Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 525pF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDZ663P
Full Specifications of FDZ663P
| Model Number | FDZ663P |
| Model Name | onsemi FDZ663P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 2.7A 134mΩ@2A,4.5V 1.3W 1.2V@250uA 1PCSPChannel WLCSP-4(0.8x0.8) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | WLCSP-4(0.8x0.8) |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 2.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 134mΩ@2A,4.5V |
| Power Dissipation (Pd) | 1.3W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 525pF@10V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |